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| LAB MECHANICAL DATA Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 3.55 (0.140) 3.81 (0.150) SEME BUL50A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR * * * * * * SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI-REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.50 (0.177) M ax. 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.800) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) BSC TO-247 Pin 1 - Base Pad 2 - Collector 15.2 max 14 2.0 4.6 max Pad 3 - Emitter 4.4 FEATURES 21.0 max 12.7 max 4.25 Dia. 4.15 1 2 3 * Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. * Ion implant and high accuracy masking for tight control of characteristics from batch to batch. * Triple Guard Rings for improved control of high voltages. 13.6 min 5.5 11 1.15 0.95 0.4 1.6 SOT93 Pin 1 - Base Pad 2 - Collector Pad 3 - Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25C Operating and Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 1000V 500V 10V 15A 30A 5A 125W -55 to +175C Prelim. 3/95 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO SEME BUL50A Test Conditions Min. 500 1000 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS Collector - Emitter Sustaining Voltage IC = 100mA Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Base Cut-Off Current Collector - Emitter Cut-Off Current Emitter Cut-Off Current IC = 1mA IE = 1mA VCB = 1000V TC = 125C IB = 0 VEB = 5V IC = 0 IC = 0.5A IC = 5A IC = 10A IC = 0.5A TC = 125C VCE = 4V VCE = 4V VCE = 4V TC = 125C IB = 0.1A IB = 1A IB = 2A IB = 1A IB = 2A VCE = 4V VCE = 4V f = 1MHz VCE = 500V V 10 100 100 10 100 mA mA mA 15 10 5 4 50 20 12 10 0.05 0.2 0.3 0.9 1.0 0.8 20 45 0.1 0.4 1.2 1.1 1.3 1.0 V V MHz pF V -- hFE* DC Current Gain VCE(sat)* Collector - Emitter Saturation Voltage IC = 5A IC = 10A IC = 5A IC = 10A IC = 3A IC = 0.2A VCB = 20V VBE(sat)* VBE(on) ft Cob Base - Emitter Saturation Voltage Base - Emitter On Voltage DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/95 |
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